Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -19 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = -100V1 Lower RDS(ON) : 0.161 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

SFH9154Advanced Power MOSFETFEATURESBVDSS = -150 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaTO-3P 150oC Operating Temperature Lower Leakage Current : 10 A(Max.) @ VDS = -150V1 Lower RDS(ON) : 0.140 (Typ.)231.Gate 2. Drain 3. SourceAbsol

INCHANGE Semiconductorisc P-Channel MOSFET Transistor SFH9154FEATURESWith TO-3PN packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T