Справочник MOSFET. DMG4812SSS

 

DMG4812SSS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMG4812SSS
   Маркировка: G4812SS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.54 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 2.3 V
   Максимально допустимый постоянный ток стока |Id|: 8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 18.5 nC
   Время нарастания (tr): 8.73 ns
   Выходная емкость (Cd): 158 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для DMG4812SSS

 

 

DMG4812SSS Datasheet (PDF)

 ..1. Size:154K  diodes
 dmg4812sss.pdf

DMG4812SSS DMG4812SSS

DMG4812SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver: V(BR)DSS RDS(on) TA = 25C Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction15m @ VGS= 10V 10

 9.1. Size:161K  diodes
 dmg4800lfg.pdf

DMG4812SSS DMG4812SSS

DMG4800LFGN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN3030-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

 9.2. Size:237K  diodes
 dmg4800lk3.pdf

DMG4812SSS DMG4812SSS

DMG4800LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

 9.3. Size:143K  diodes
 dmg4800lsd.pdf

DMG4812SSS DMG4812SSS

DMG4800LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D

 9.4. Size:261K  diodes
 dmg4822ssd.pdf

DMG4812SSS DMG4812SSS

DMG4822SSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Input Capacitance ID max V(BR)DSS RDS(ON) max Low Input/Output leakage TA = +25C Low Gate Resistance 30V 20m @ VGS = 10V 10A Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 9.5. Size:266K  inchange semiconductor
 dmg4800lk3.pdf

DMG4812SSS DMG4812SSS

isc N-Channel MOSFET Transistor DMG4800LK3FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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