DMN2500UFB4 - параметры транзистора MOSFET, его аналоги, datasheet

DMN2500UFB4 Datasheet (PDF)

..1. Size:124K diodes
dmn2500ufb4.pdf pdf_icon

DMN2500UFB4N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 0.4 @ VGS = 4.5V 1A 20V Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 0.8A Ultra-low package profile, 0.4mm max

8.1. Size:570K diodes
dmn2501ufb4.pdf pdf_icon

DMN2501UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V Max. TA = +25C Low Input Capacitance 0.4 @ VGS = 4.5V 1.5A Fast Switching Speed 20V 0.5 @ VGS = 2.5V 1.3A Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 1.1A

9.1. Size:278K diodes
dmn2550ufa.pdf pdf_icon

DMN2550UFA20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 0.45 @ VGS = 4.5V Low On-Resistance0.55 @ VGS = 2.5V Very Low Gate Threshold Voltage, 1.0V Max 20V 0.6 A 0.75 @ VG

9.2. Size:279K diodes
dmn25d0ufa.pdf pdf_icon

DMN25D0UFA25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.4mm ultra low profile package for thin application V(BR)DSS RDS(on) TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 Low VGS(th), can be driven directly from a battery 4 @ VGS = 4.5V 0.32A 25V Low RDS(on) 5 @ VGS = 2.7V 0.28A ESD Protected Gate (>6kV Hu

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .