DMN6140LQ - описание и поиск аналогов

 ..1. Size:530K  diodes
 dmn6140lq.pdf 

DMN6140LQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

 6.1. Size:552K  diodes
 dmn6140l.pdf 

DMN6140L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance Fast Switching Speed 140m @ VGS = 10V 2.3A 60V Low Input/Output Leakage 170m @ VGS = 4.5V 2.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gr

 9.1. Size:545K  diodes
 dmn61d8l dmn61d8lvt.pdf 

DMN61D8L/LVT Product Summary Features and Benefits ID max Provides a more reliable and robust interface between sensitive V(BR)DSS RDS(ON) max TA = +25 C logic and DC relay coils. Replaces 3-4 discrete components enabling PCB footprint to be 1.8 @ VGS = 5V 60V 470mA reduced. 2.4 @ VGS = 3V Internal active clamp removes the need for external zener diode.

 9.2. Size:505K  diodes
 dmn61d8lq.pdf 

DMN61D8LQ INTEGRATED RELAY AND INDUCTIVE LOAD DRIVER Product Summary Features and Benefits Provides A More Reliable And Robust Interface Between ID Max Sensitive Logic And DC Relay Coils BVDSS RDS(ON) Max TA = +25 Replaces 3 to 4 Discrete Components Enabling PCB Footprint C To Be Reduced 1.8 @ VGS = 5V 60V 470mA Internal Active Clamp Removes The Need For E

 9.3. Size:480K  diodes
 dmn61d9uw.pdf 

DMN61D9UW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 2 @ VGS = 5.0V 340mA 60V Fast Switching Speed 300mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 2kV Description Totally Lead-Free & Fully RoHS Compliant (Not