Справочник MOSFET. 2N6849U

 

2N6849U MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N6849U
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 34.8 nC
   trⓘ - Время нарастания: 140 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO-205AF

 Аналог (замена) для 2N6849U

 

 

2N6849U Datasheet (PDF)

 ..1. Size:147K  microsemi
 2n6849u.pdf

2N6849U 2N6849U

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS JAN 2N6849 2N6849UJANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source

 8.1. Size:133K  international rectifier
 2n6849 irff9130.pdf

2N6849U 2N6849U

PD - 90550DIRFF9130 JANTX2N6849REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849HEXFETTRANSISTORS JANS2N6849THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry an

 8.2. Size:120K  semelab
 2n6849hp.pdf

2N6849U 2N6849U

P-CHANNEL POWER MOSFET 2N6849HP MOSFET Transistor In A Hermetic Metal TO-205AD Package Single Pulse Avalanche Energy Rated Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage -100V VDG RGS = 20K Drain Gat

 9.1. Size:130K  international rectifier
 2n6845 irff9120.pdf

2N6849U 2N6849U

PD - 90552CIRFF9120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845HEXFETTRANSISTORS JANTXV2N6845THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9120 -100V 0.60 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proce

 9.2. Size:130K  international rectifier
 2n6847 irff9220.pdf

2N6849U 2N6849U

PD - 90553CIRFF9220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847HEXFETTRANSISTORS JANTXV2N6847THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9220 -200V 1.5 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 9.3. Size:256K  no
 2n6845u 2n6847u 2n6847u.pdf

2N6849U 2N6849U

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/563G shall be completed by 9 February 2013. 9 November 2012 SUPERSEDING MIL-PRF-19500/563F 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U, JA

 9.4. Size:19K  semelab
 2n6845lcc4.pdf

2N6849U 2N6849U

2N6845LCC4IRFE9120MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040)VDSS -100V 2.16 (0.085)12 13 14 15 161.39 (0.055)ID(cont) -3.5A1.02 (0.040)11 17RDS(on) 0.610 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)8 20.51 (0.020)FEATURES0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3

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