TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag

PD -90431CIRFF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798HEXFETTRANSISTORS JANTXV2N6798THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF230 200V 0.40 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N68002N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,QUALIFIED TO MIL-PRF-19500/557100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/557DESCRIPTIO

2N6798MECHANICAL DATADimensions in mm (inches)N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES V(BR)DSS = 200V ID = 5.5A ! RDSON = 0.40