10N90A - описание и поиск аналогов

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX10N90A Features 900 Volts Ultrafast body diode 10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNEL Rev

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 0.938 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 0.938 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1

UNISONIC TECHNOLOGIES CO., LTD 10N90 Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150 The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

SSF10N90F1 Main Product Characteristics V 900V DSS R (on) 0.85 (typ.) DS I 10A D Marking and pin TO-3P Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Low On Resistance Low Gate Charge Fast switching and reverse body recovery Description It utilizes the latest processing techniques to achieve the high cell density a

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N90V 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N90V TO-3P CS10N90V Absolute Maxi

isc N-Channel MOSFET Transistor AOTF10N90 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =0.98 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor AOK10N90 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =0.98 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos