13N60AF - описание и поиск аналогов

RoHS 13N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of D 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as s

April 2001 IGBT SGS13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UFD series is designed for applications such as motor High input impedance control and general inverters whe

April 2001 IGBT SGS13N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UF series is designed for applications such as motor High input impedance control and general inverters where

Feb 2009 PFP13N60/PFF13N60 FEATURES 600V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 600 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) = 0.51 Unequalled Gate Charge 48 nC (Typ.)

STL13N60M2 N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation 1 2 3 Low gate input resistance 4 100% avalanche tested PowerFLAT 5x6

STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STB13N60M2 TAB 650 V 0.38 11 A STD13N60M2 TAB 3 3 Extremely low gate charge 1 1 Lower RDS(on) x area vs previous generation DPAK D2PAK Low gate input resistance

STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 3 2 1 STP13N60M2 3 2 1 IPAK STU13N60M2 650 V 0.38 11 A TO-220 STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 650 V 0.38 11 A STFI13N60M2 3 2 Extremely low gate charge 1 1 2 3 TO-220FP Lower RDS(on) x area vs previous generation I2PAKFP Low gate input r

STF13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package VDS RDS(on) max. ID Order codes STF13N60DM2 600 V 0.365 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 3 2 1 100% avalanche tested Extremely high dv/dt ruggedness TO-220FP Zener-protected D(2) A

STD13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package VDS RDS(on) max. ID Order codes TAB STD13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 1 Extremely low gate charge and input capacitance DPAK Low on-resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Zener-protected

STP13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 package Features VDS RDS(on ) max. ID Order code TAB STP13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 Low on-resistance TO-220 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Ze

August 2009 SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC) process that differentiates it from preceding multi-epi based

IGBT SGP13N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed s

IGBT SGP13N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 6.5A The UFD series is designed for applications such as motor High input impedance control and general inverters where high spee

N-CHANNEL IGBT SGW13N60UFD FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 37nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Charac

N-CHANNEL IGBT SGH13N60UFD FEATURES TO-3P * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 37nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Charact

N-CHANNEL IGBT SGP13N60UF FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage

N-CHANNEL IGBT SGP13N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 37nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Charac

N-CHANNEL IGBT SGW13N60UF FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage

IXKP 13N60C5M ID25 = 6.5 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.3 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25 C 600 V - High blocking capabi

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FMV13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

FMC13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5

FMC13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

FMH13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

FMV13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

FMI13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

FMI13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (

FMP13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

FMP13N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5

http //www.fujisemi.com FML13N60ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0 0.2 7.0 0.2 0.4 0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

KF13N60N SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode _ A + 15.60 0.20 _ B 4.80 + 0.20 power supplies. _

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

PTP13N60 PTA13N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 600V 0.45 13A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTP13N60 TO-22

SW13N60D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 600V High ruggedness Low RDS(ON) (Typ 0.5 )@VGS=10V ID 13A Low Gate Charge (Typ 54nC) RDS(ON) 0.5 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow

SW13N60K2 N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET BVDSS 600V Features TO-220F TO-251 TO-252 ID 13A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charger, Adaptor 1. Gate 2. Drain 3

Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 HFS13N60U ID = 14.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 HFP13N60U ID = 14.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 60.0 nC (Typ.) Extended Safe Operating Area

CS13N60P,CS13N60F nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS13N60F TO-220F CS13N60F CS

isc N-Channel MOSFET Transistor FCP13N60N FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

isc N-Channel MOSFET Transistor FCPF13N60NT FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL