Справочник MOSFET. BLM8205

 

BLM8205 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLM8205
   Маркировка: 8205
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 19.5 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для BLM8205

 

 

BLM8205 Datasheet (PDF)

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 blm8205.pdf

BLM8205 BLM8205

Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET D 1 D 2 Description The BLM8205 uses advanced trench technology to provide G 1 G 2 excellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2 Schematic diagram General Features

 0.1. Size:629K  belling
 blm8205a.pdf

BLM8205 BLM8205

Pb Free ProductBLM8205A N-Channel Enhancement Mode Power MOSFET D1D2Description The BLM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.

 0.2. Size:870K  belling
 blm8205e-j blm8205e-g.pdf

BLM8205 BLM8205

BLM8205EPower MOSFET1. DescriptionAdvantagesThe BLM8205E uses advanced trenchtechnology to provide excellent R ,low gateDS(ON)charge and operation with gate voltages as lowas 0.7V.This device is suitable for use as aBattery protection or other switching application.Key CharacteristicsParameter Value UnitSOT23-6Schematic diagramV 19.5 VDSI 6 ADR 18 m

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 blm8205b.pdf

BLM8205 BLM8205

Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET D1 D2 Description provide The BLM8205B uses advanced trench technology to G1 G2 excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as a S1 S2 Battery protection or in other Switching application. Schematic diagram General Features

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History: BF1109WR

 

 
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