Справочник MOSFET. BSO612CVG

 

BSO612CVG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSO612CVG
   Маркировка: 612CV
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 10.3 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для BSO612CVG

 

 

BSO612CVG Datasheet (PDF)

 ..1. Size:387K  infineon
bso612cvg.pdf

BSO612CVG
BSO612CVG

Rev. 2.1BSO 612 CV GSIPMOS Small-Signal-TransistorProduct Summary N PDrain source voltage VDS 60 -60 VFeaturesDrain-Source on-state RDS(on) 0.12 0.3 Dual N- and P -Channelresistance Enhancement modeContinuous drain current ID 3 -2 A Avalanche rated Pb-free lead plating;RoHS compliantType Package MarkingBSO 612 CV PG-DSO-8 612CVMaximum Ratings,at Tj = 25 C, unl

 6.1. Size:166K  infineon
bso612cv.pdf

BSO612CVG
BSO612CVG

Preliminary dataBSO 612 CVSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.12 0.3resistance Avalanche ratedContinuous drain current ID 3 -2 A dv/dt ratedType Package Ordering CodeBSO 612 CV SO 8 Q67041-S4015Maximum Ratings,at Tj = 25 C, unless otherwi

 9.1. Size:501K  infineon
bso615ng.pdf

BSO612CVG
BSO612CVG

G Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking615NRev. 1.2 Page 1 2012-04-04Rev. 1.2 Page 2 2012-04-04Rev. 1.2 Page 3 2012-04-04Rev. 1.2 Page 4 2012-04-04Rev. 1.2 Page 4 2012-04-04Rev. 1.2 Page 5 2012-04-04Rev. 1.4 Page 6 2012-04-04Rev. 1.2 Page 7 2012-04-04

 9.2. Size:522K  infineon
bso615n .pdf

BSO612CVG
BSO612CVG

G Pb-free lead plating; RoHS compliantMarking615NRev. 1.1 Page 1 2007-02-21Rev. 1.1 Page 2 2007-02-21Rev. 1.1 Page 3 2007-02-21Rev. 1.1 Page 4 2007-02-21Rev. 1.1 Page 4 2007-02-21Rev. 1.1 Page 5 2007-02-21Rev. 1.1 Page 6 2007-02-21Rev. 1.1 Page 7 2007-02-21

 9.3. Size:104K  infineon
bso615n.pdf

BSO612CVG
BSO612CVG

Preliminary Data BSO 615NSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 60 VVDS Dual N ChannelDrain-Source on-state resistance 0.15 Enhancement mode RDS(on) Continuous drain current 2.6 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 615N SO 8 Q67041-S2843Maximum Ratings, at Tj = 25 C, un

 9.4. Size:435K  infineon
bso615cg.pdf

BSO612CVG
BSO612CVG

Rev. 2.1BSO 615 C GSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3resistance Logic LevelContinuous drain current ID 3.1 -2 A Avalanche rated Pb-free lead plating; RoHS compliantType Package MarkingBSO 615 C PG-DSO-8 615CMaximum Ratings,at Tj =

 9.5. Size:93K  infineon
bso613sp.pdf

BSO612CVG
BSO612CVG

Preliminary dataBSO613SPVSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.13 Avalanche rated Continuous drain current ID -3.44 A dv/dt rated18S D27S D36S D45G DTop View SIS00062Type Package Ordering CodeBSO613SPV SO 8 Q67042-S4021Maximum Ratings,a

 9.6. Size:108K  infineon
bso615nv.pdf

BSO612CVG
BSO612CVG

Preliminary DataBSO 615NVSIPMOS Small-Signal-TransistorProduct SummaryFeaturesDrain source voltage 60 VVDS Dual N ChannelDrain-Source on-state resistance 0.12 Enhancement mode RDS(on) Continuous drain current 3.1 AID Avalanche rated dv/dt ratedType Package Ordering CodeBSO 615NV SO 8 Q67041-S2844Maximum Ratings, at Tj = 25 C, unless otherwise

 9.7. Size:361K  infineon
bso613spvg.pdf

BSO612CVG
BSO612CVG

BSO613SPV G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.13 Avalanche rated Continuous drain current ID -3.44 A dv/dt rated18S D27S D Qualified according to AEC Q101 36S D45G DTop View SIS00062Type Package Lead freeBSO613SPV G PG-SO 8 YesMaximum Rati

 9.8. Size:162K  infineon
bso615c.pdf

BSO612CVG
BSO612CVG

Preliminary dataBSO 615 CSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3resistance Logic LevelContinuous drain current ID 3.1 -2 A Avalanche rated dv/dt ratedType Package Ordering CodeBSO 615 C SO 8 Q67041-S4024Maximum Ratings,at Tj = 25 C,

 9.9. Size:913K  cn vbsemi
bso615ng.pdf

BSO612CVG
BSO612CVG

BSO615NGwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

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