BSS119N - аналоги, параметры транзистора - Справочник транзисторов

BSS119N даташит

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BSS119N OptiMOS Small-Signal-Transistor Product Summary Features VDS 100 V N-channel RDS(on),max VGS=10 V 6 W Enhancement mode VGS=4.5 V 10 Logic level (4.5V rated) ID 0.19 A Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant; Halogen free 3 1 2 Type Package Tape and Reel Information Marking Halogen fre

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BSS 119 SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.6 ...2.6 V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6 SOT-23 sSH Type Ordering Code Tape and Reel Information BSS 119 Q67000-S007 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 100 V V Drain-gate voltage DGR RGS =

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Rev. 1.5 BSS119 SIPMOS Small-Signal-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 6 Enhancement mode ID 0.17 A Logic Level PG-SOT23 dv/dt rated 3 Drain pin 3 Gate Qualified according to AEC Q101 pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking BSS119 L6433 10000 pcs/reel sSH PG-SOT23 Yes

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DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor 1995 Apr 07 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode BSS110 vertical D-MOS transistor FEATURES Low threshold voltage Direct interface to C-MOS, TTL, etc. Hi