BSS123L6327 - описание и поиск аналогов

Rev. 1.41 BSS123 SIPMOS Small-Signal-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 6 Enhancement mode ID 0.17 A Logic Level PG-SOT23 dv/dt rated 3 Drain pin 3 Gate Qualified according to AEC Q101 pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking PG-SOT23 Yes BSS123 L6327 3000 pcs/reel SAs

BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features Pb-Free Packages are Available 170 mAMPS 100 VOLTS RDS(on) = 6 W N-Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage 1 - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current Adc 2 -

BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value

FM120-M WILLAS THRU BSS123LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V N-CHANNEL POWER MOSFET SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board s

LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G S-LBSS123LT1G FEATURE 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 DEVICE MARKING AND ORDERING INFORMATION 2 SOT-23 Device Marking Shipping LBSS123LT1G 3000/Tape&Reel SA