BSS123L6327 Datasheet. Specs and Replacement
Type Designator: BSS123L6327 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.1 nS
Cossⓘ - Output Capacitance: 8.5 pF
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BSS123L6327 substitution
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BSS123L6327 datasheet
bss123l6327 bss123l6433.pdf
Rev. 1.41 BSS123 SIPMOS Small-Signal-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 6 Enhancement mode ID 0.17 A Logic Level PG-SOT23 dv/dt rated 3 Drain pin 3 Gate Qualified according to AEC Q101 pin1 2 Source pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking PG-SOT23 Yes BSS123 L6327 3000 pcs/reel SAs ... See More ⇒
bss123lt1-d.pdf
BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features Pb-Free Packages are Available 170 mAMPS 100 VOLTS RDS(on) = 6 W N-Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage 1 - Continuous VGS 20 Vdc - Non-repetitive (tp 50 ms) VGSM 40 Vpk Drain Current Adc 2 -... See More ⇒
bss123lt1g bvss123lt1g.pdf
BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http //onsemi.com Features 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring 100 VOLTS Unique Site and Control Change Requirements; AEC-Q101 RDS(on) = 6 W Qualified and PPAP Capable N-Channel These Devices are Pb-Free and are RoHS Compliant 3 MAXIMUM RATINGS Rating Symbol Value... See More ⇒
Detailed specifications: BSP88, BSP89L6327, BSR606N, BSS119L6327, BSS119N, BSS123D87Z, BSS123-7, BSS123-7-F, 2N60, BSS123L6433, BSS123N, BSS123TA, BSS123TC, BSS126, BSS127, BSS127S, BSS127SSN
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
