2SK2024-01
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK2024-01
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 3
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 50
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5
Ohm
Тип корпуса:
TO-3PN
- подбор MOSFET транзистора по параметрам
2SK2024-01
Datasheet (PDF)
..2. Size:219K inchange semiconductor
2sk2024-01.pdf 
isc N-Channel MOSFET Transistor 2SK2024-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.2. Size:225K fuji
2sk2021-01.pdf 
N-channel MOS-FET2SK2021-01FAP-IIA Series 500V 1,6 5A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva
8.3. Size:204K fuji
2sk2020-01mr.pdf 
N-channel MOS-FET2SK2020-01MRFAP-IIA Series 500V 3 3,5A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
8.5. Size:226K fuji
2sk2023-01.pdf 
FUJI POWER MOSFET2SK2023-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDEC TO-220ABGeneral purpose power amplifierEIAJ SC-46Equivalent c
8.6. Size:195K fuji
2sk2022-01m.pdf 
N-channel MOS-FET2SK2022-01MFAP-IIA Series 500V 1,6 5A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv
8.8. Size:214K fuji
2sk2025-01.pdf 
N-channel MOS-FET2SK2025-01FAP-IIA Series 600V 2,4 4A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva
8.9. Size:213K inchange semiconductor
2sk2028-01.pdf 
isc N-Channel MOSFET Transistor 2SK2028-01MDESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a
8.10. Size:215K inchange semiconductor
2sk2021-01.pdf 
isc N-Channel MOSFET Transistor 2SK2021-01DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
8.11. Size:229K inchange semiconductor
2sk2020-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK2020-01MRDESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)
8.12. Size:215K inchange semiconductor
2sk2027-01.pdf 
isc N-Channel MOSFET Transistor 2SK2027-01DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
8.13. Size:212K inchange semiconductor
2sk2020-01.pdf 
isc N-Channel MOSFET Transistor 2SK2020-01DESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a
8.14. Size:215K inchange semiconductor
2sk2023-01.pdf 
isc N-Channel MOSFET Transistor 2SK2023-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
8.15. Size:212K inchange semiconductor
2sk2022-01m.pdf 
isc N-Channel MOSFET Transistor 2SK2022-01MDESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a
8.16. Size:219K inchange semiconductor
2sk2026-01.pdf 
isc N-Channel MOSFET Transistor 2SK2026-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.17. Size:215K inchange semiconductor
2sk2025.pdf 
isc N-Channel MOSFET Transistor 2SK2025-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
Другие MOSFET... FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, 5N60
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
History: IXFX13N100
| 2SK160A
| IPP023NE7N3
| IPI037N06L3G
| 8N65KL-TMS-T
| SIA415DJ
| SDF220
