75N05E - описание и поиск аналогов

isc N-Channel MOSFET Transistor 75N05E DESCRIPTION Drain Current I = 75A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V

RFG75N05E Data Sheet July 1999 File Number 2275.5 75A, 50V, 0.008 Ohm, N-Channel Power Features MOSFET 75A, 50V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.008 power field effect transistors. They are advanced power Electrostatic Discharge Rated MOSFETs designed, tested, and guaranteed to withstand a UIS Rating Curve (Single Pulse) specified level

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP75N05HD/D Designer's Data Sheet MTP75N05HD HDTMOS E-FET Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS E FET is designed to 75 AMPERES withstand high energy in the avalanche and commutation modes. RDS

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N05HD/D Designer's Data Sheet MTB75N05HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 9.5 m than any existing sur

Preliminary Data Sheet NP75N055YUK R07DS1005EJ0100 55 V 75 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 08, 2013 Description The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.5 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive t

SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a

SUP/SUB75N05-06A New Product Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View N-Channel MOSFET Ordering Information SUP75N05-06A Ordering Information SUB75N05-06A ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symb

SUP/SUB75N05-07 New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.007 @ VGS = 10 V a 55 "75 a 55 "75 0.009 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-07 Top View N-Channel MOSFET SUP75N05-07 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter S

MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N-Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 75 AMPERES converters and PW

SFF75N05M SFF75N05Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 75 AMP 50 VOLTS DESIGNER'S DATA SHEET 15m FEATURES N-CHANNEL Advanced high-cell density withstands high energy MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft recove