9N80A - аналоги, параметры транзистора - Справочник транзисторов

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isc N-Channel MOSFET Transistor 9N80A DESCRIPTION Avalanche rugged technology Rugged gate oxide technology Lower input capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 800 V DSS GS

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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

Другие MOSFET... RFM4N35 , RFM4N40 , 4N60AS , 50N06FI , 5NA80 , 60N06-14 , 75N05E , 8N90A , RU7088R , 9N90L-T3P , BUK444-200A , BUK444-800 , BUK445-200B , BUK445-60H , BUK453-60B , BUK452-60A , BUK452-60B .