9N80A Datasheet and Replacement
Type Designator: 9N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 195 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-3P
9N80A substitution
9N80A Datasheet (PDF)
9n80a.pdf

isc N-Channel MOSFET Transistor 9N80ADESCRIPTIONAvalanche rugged technologyRugged gate oxide technologyLower input capacitanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 800 VDSS GS
ssf9n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
ssh9n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
Datasheet: RFM4N35 , RFM4N40 , 4N60AS , 50N06FI , 5NA80 , 60N06-14 , 75N05E , 8N90A , MMD60R360PRH , 9N90L-T3P , BUK444-200A , BUK444-800 , BUK445-200B , BUK445-60H , BUK453-60B , BUK452-60A , BUK452-60B .
History: SFP840
Keywords - 9N80A MOSFET datasheet
9N80A cross reference
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History: SFP840



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