9N80A Datasheet. Specs and Replacement

Type Designator: 9N80A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-3P

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9N80A datasheet

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9N80A

isc N-Channel MOSFET Transistor 9N80A DESCRIPTION Avalanche rugged technology Rugged gate oxide technology Lower input capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 800 V DSS GS ... See More ⇒

 0.1. Size:935K  samsung
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9N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

 0.2. Size:936K  samsung
 ssh9n80a.pdf pdf_icon

9N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

Detailed specifications: RFM4N35, RFM4N40, 4N60AS, 50N06FI, 5NA80, 60N06-14, 75N05E, 8N90A, 3401, 9N90L-T3P, BUK444-200A, BUK444-800, BUK445-200B, BUK445-60H, BUK453-60B, BUK452-60A, BUK452-60B

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