JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate MOSFETS D M7002TTD03 MOSFET( N-Channel ) WBFBP-03A (1.61.60.5) TOP DESCRIPTION unit: mm High cell density, DMOS technology. These products have been designed to G S minimize on-state resistance while provide rugged, reliable, and fast switching D performance. They can be used i

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0@VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0@VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

CTLDM7002A-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CPTLM621 CASE FEATURES: Low rDS(ON) Device is Halogen Free by design Low VDS(ON)APPLICATIONS: Low

CMPDM7002ACMPDM7002AG*www.centralsemi.comSURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002A SILICON MOSFETand CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special de

CMLDM7002ACMLDM7002AG*CMLDM7002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODESILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co

CEDM7002AEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNT SILICONN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7002AE MOSFETis a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications.MARKING CODE: 7SOT-883L CASEAPPLICATIONS: FEATURES:Load/Power switc

CMPDM7002AEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNT SILICONN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002AE MOSFETis a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications.MARKING CODE: C702ESOT-23 CASEFEATURES:ESD protection up to 18

CTLDM7002A-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7002A-M621HSILICON MOSFETis a very low profile (0.4mm) Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.MARKING CODE: CNDFEATURES:TLM621H CASE Low rDS(ON) Device is Halogen Free by design

CMXDM7002ASURFACE MOUNT www.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMXDM7002A SILICON MOSFETSis special dual version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special Dual Transistor dev

CMPDM7002AHCSURFACE MOUNTwww.centralsemi.comN-CHANNELENHANCEMENT-MODEDESCRIPTION:SILICON MOSFETThe CENTRAL SEMICONDUCTOR CMPDM7002AHCis a High Current version of the 2N7002A Enhancement-mode N-Channel MOSFET, designed for high speed pulsed amplifier and driver applications.MARKING CODE: 702H SOT-23 CASE Device is Halogen Free by design FEATURES: ESD Protectio

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFETS D M7002NND03 MOSFET( N-Channel ) WBFBP-03B (1.21.20.5) TOP DESCRIPTION unit: mm High cell density, DMOS technology. These products have been designed to G S minimize on-state resistance while provide rugged, reliable, and fast switching D performance. They can be used i

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM7002SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FET

WNM7002 WNM7002 Single N-Channel, 60V, 0.3A, Power MOSFET Http://www.sh-willsemi.com DVDS (V) Typical RDS(on) () 3.7 @ VGS= 10V 60 S3.8 @ VGS= 4.5V GESD protected SOT-23 Descriptions D The WNM7002 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is

SM7002NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/80A,RDS(ON)=10.8m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM7002NS

SM7002NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/0.45A , RDS(ON)=2.2 (max.) @ VGS=10VS RDS(ON)=2.6 (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23N(RoHS Compliant)D ESD Protection : HBM=(+/-)1600V MM=(+/-)100VGApplications High Speed Switching.S Analog Switching Application.N-Chann

Pb Free ProductBLM7002KN-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON)

Pb Free Product BLM7002 N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES V = 60V,I = 0.115A DS DR

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0@VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0@VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

SSM7002EGUN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002EGU acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as smallconverters and general load-switching circuits.ID 250mAThe SSM7002EGU is supplied in a RoHS-compliantPb-free; RoHS-

SSM7002KGENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002KGEN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 640mAD The SSM7002KGEN is supplied in an RoHS-compliantPb-free; R

SSM7002DGUDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM7002DG acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.ID 250mAThe SSM7002DGU is supplied in a RoHS-compliantPb-free;

ATM7002NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 60V Drain Current: 340mA Features Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage R

ATM7002KNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage:60V Continuous Drain Current:300mAFEATURES Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance 3 ESD protected up to 2KV12SOT-23 1.Gate 2.Source 3.DrainDrainGateSourceABSOLUTE MAXIMUM RATINGS (T = 25 )aParameter Symbol Value UnitDrain-Sour

TPM7002DFN360V N-Channel Mosfetwww.sot23.com.twProduct Summary Application V 60V DS Load/Power Switching I 340mA D Interfacing Switching R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm Battery Management for Ultra Small Portable DS(ON) GSElectronics Logic Level Shift Package and Pin Configuration Circuit diagram D

HM7002SRSmall Signal MOSFET30 V, 154 mA, Single, N-Channel, GateESD Protection, SC-89Features Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate We declare that the material of product is ROHS compliant and halogen free. ESD Protected:2000VESD Protected:1500VSC-89 S- Prefix for Automotive and Other Applications Requirin

HM7002JRSmall Signal MOSFET115 mAmps, 60 VoltsNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking Shipping HM7002JR 72 8000 Tape & ReelN - ChannelMAXIMUM RATINGS3Rating Sy

HM7002KDWHM7002KDWSmall Signal MOSFET380 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT-363 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND

HM7002DWHM7002DWSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-3631. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT-363 qualified and PPAP capable.ESD Protected:1000V2. DEVICE MARKIN

HM7002BN-Channel Enhancement Mode MOSFETFeature SOT-23 60V/0.2A, R DS(ON) = 7.5(MAX) @V GS = 10V. Id = 0. A RDS(ON) = 7.5(MAX) @V GS = 5V . Id = 0.05A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. 1. GATE 2. SOURCE 3. DRAINApplications Power Management in Desktop Computer or DC/DC Convert

HM7002N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 60V,ID = 0.5A RDS(ON)

HM7002KRHM7002KRSmall Signal MOSFET115 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD Protected:1000V2. DEVICE MA

Small Signal MOSFET 115 mAmps, 60 Volts NChannel S We declare that the material of product compliance with RoHS requirements. ESD Protected:1000V S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S MAXIMUM RATINGSRating Symbol Value Unit115 mAMPS

HNM7002N-Channel MOSFETs115mA,60VNN N-Channel Enhancement Mode Field Effect Transistor SMDHNM7002N-ChannelFeaturesEnhancement Mode60V, 115mA, RDS(ON)=7.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)Rugged

HNM7002EN-Channel MOSFETs300mA,60VNN N-Channel Enhancement-Mode MOSFET With ESD SMDHNM7002EN-ChannelFeaturesEnhancement Mode60V, 300mA, RDS(ON)=3.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)