Справочник MOSFET. GP2M008A060XGX

 

GP2M008A060XGX MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: GP2M008A060XGX
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23 nC
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO-220 TO-220F

 Аналог (замена) для GP2M008A060XGX

 

 

GP2M008A060XGX Datasheet (PDF)

 ..1. Size:398K  globalpower
gp2m008a060xgx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M008A060HGGP2M008A060FG(H)FeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 7.5A

 2.1. Size:522K  globalpower
gp2m008a060xxx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 8.1. Size:416K  globalpower
gp2m007a065xg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M007A065HGGP2M007A065FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 6.5A

 8.2. Size:366K  globalpower
gp2m005a050xx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A

 8.3. Size:410K  globalpower
gp2m005a060xg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M005A060HGGP2M005A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.2A

 8.4. Size:419K  globalpower
gp2m004a060xx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M004A060HGGP2M004A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 4.0A

 8.5. Size:505K  globalpower
gp2m002a060xx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A

 8.6. Size:242K  globalpower
gp2m007a080f.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M007A080FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability800V 7A

 8.7. Size:395K  globalpower
gp2m004a065xx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M004A065HGGP2M004A065FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 4.0A

 8.8. Size:562K  globalpower
gp2m009a090ng.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A

 8.9. Size:514K  globalpower
gp2m004a060xg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A

 8.10. Size:394K  globalpower
gp2m002a065xx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M002A065HGGP2M002A065FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 1.8A

 8.11. Size:499K  globalpower
gp2m002a065xg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A

 8.12. Size:500K  globalpower
gp2m005a050xg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A

 8.13. Size:240K  globalpower
gp2m009a090fg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M009A090FGN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge Improved dv/dt capability 900V 9A

 8.14. Size:503K  globalpower
gp2m004a065xg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A

 8.15. Size:507K  globalpower
gp2m005a060xxx.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

 8.16. Size:405K  globalpower
gp2m002a060xg.pdf

GP2M008A060XGX
GP2M008A060XGX

GP2M002A060HGGP2M002A060FGFeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 2.0A

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