All MOSFET. GP2M008A060XGX Datasheet

 

GP2M008A060XGX MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M008A060XGX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220 TO-220F

 GP2M008A060XGX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M008A060XGX Datasheet (PDF)

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