GSM2913W - параметры транзистора MOSFET, его аналоги, datasheet

GSM2913W Datasheet (PDF)

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GSM2913W GSM2913W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2913W, P-Channel enhancement mode -30V/-4.5A,RDS(ON)=120m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.8A,RDS(ON)=155m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

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GSM2912 GSM2912 20V N-CH Enhancement Mode MOSFET Product Description Features GSM2912, N-Channel enhancement mode 20V/4.5A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.6A,RDS(ON)=60m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=78m@VGS=1.8V Super high density cell design for extremely These devices are particula

8.2. Size:886K globaltech semi
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GSM2911 GSM2911 20V P-CH Enhancement Mode MOSFET Product Description Features GSM2911, P-Channel enhancement mode P-ChannelMOSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 96m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These -20V/-3.8A,RDS(ON)=128m@VGS=-2.5V devices are particularly suited for low voltage -20V/-2.5A,RDS(ON)=180m@VGS=-1.8V po

Другие MOSFET... GSM2367AS , GSM2367S , GSM2376 , GSM2379 , GSM2519 , GSM2604 , GSM2911 , GSM2912 , 5N60 , GSM3009S , GSM3015S , GSM3016S , GSM3019S , GSM3025S , GSM3030 , GSM3050S , GSM3302W .