GSM4946 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM4946
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 85 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
Тип корпуса: SOP-8
GSM4946 Datasheet (PDF)
gsm4946.pdf
60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm4946w.pdf
GSM4946W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4946bw.pdf
GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4948.pdf
GSM4948 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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