GSM4946 - параметры транзистора MOSFET, его аналоги, datasheet

GSM4946 Datasheet (PDF)

..1. Size:438K globaltech semi
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60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

0.1. Size:432K globaltech semi
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GSM4946W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

0.2. Size:408K globaltech semi
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GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.1. Size:830K globaltech semi
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GSM4948 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m@VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.0A,RDS(ON)= 120m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .