GSM6601 - параметры транзистора MOSFET, его аналоги, datasheet

GSM6601 Datasheet (PDF)

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GSM6601 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM6601, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/3.4A,RDS(ON)=68m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=74m@VGS=4.5V 30V/2.0A,RDS(ON)=90m@VGS=2.5V These devices are particularly suited for low P-Channelvoltage po

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20V N & P Pair Enhancement Mode MOSFET Product Description Features GSM6604, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 20V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. 20V/2.6A,RDS(ON)=62m@VGS=2.5V P-ChannelThese devices are particularly suited for low -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V voltage power managem

8.2. Size:1520K globaltech semi
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GSM6602 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM6602, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=75m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=100m@VGS=4.5V P-ChannelThese devices are particularly suited for low -30V/-2.7A,RDS(ON)=130m@VGS=-10V voltag

Другие MOSFET... GSM6405 , GSM6405WS , GSM6424 , GSM6506S , GSM6520S , GSM6530S , GSM6561 , GSM6562 , IRFP064N , GSM6602 , GSM6604 , GSM6801 , GSM6820 , GSM6830 , GSM6993 , GSM7002 , GSM7002J .