NDP608BE datasheet, подбор замены

 ..1. Size:53K  fairchild semi
 ndb608ae ndb608b ndb608be ndp608ae ndp608b ndp608be.pdf 

May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 36 and 32A, 80V. RDS(ON) = 0.042and 0.045 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell densi

 9.1. Size:56K  fairchild semi
 ndp6030pl ndb6030pl.pdf 

June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field -30 A, -30 V. RDS(ON) = 0.042 @ VGS= -4.5 V RDS(ON) = 0.025 @ VGS= -10 V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

 9.2. Size:360K  fairchild semi
 ndp6060l ndb6060l.pdf 

April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This

 9.3. Size:62K  fairchild semi
 ndp6020p ndb6020p.pdf 

September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. RDS(ON) = 0.05 @ VGS= -4.5 V. These logic level P-Channel enhancement mode power field RDS(ON) = 0.07 @ VGS= -2.7 V. effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.075 @ VGS= -2.5 V. high cell density,

 9.4. Size:360K  fairchild semi
 ndp6060 ndb6060.pdf 

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature.

 9.5. Size:116K  njs
 ndp605a ndp605b ndp606a ndp606b.pdf 

 9.6. Size:508K  onsemi
 ndp6060l ndb6060l.pdf 

NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. Low drive requirements allowing operation directly from logic These logic level N-Channel enhancement mode power drivers. VGS(TH)

 9.7. Size:474K  onsemi
 ndp6060 ndb6060.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.8. Size:1573K  cn vbsemi
 ndp6020p.pdf 

NDP6020P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0092 at VGS = - 10 V - 60 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.0128 at VGS = - 4.5 V - 55 APPLICATIONS Load Switch TO-220AB Notebook Adaptor Switch S G G D S Top View

 9.9. Size:261K  inchange semiconductor
 ndp6051.pdf 

isc N-Channel MOSFET Transistor NDP6051 FEATURES Drain Current I =48A@ T =25 D C Drain Source Voltage- V =50V(Min) DSS Static Drain-Source On-Resistance R =0.022 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS