Preliminary Data Sheet R07DS0507EJ0100NP28N10SDE Rev.1.00Sep 16, 2011MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 52 m MAX. (VGS = 10 V, ID = 14 A) RDS(on)2 = 59 m MAX. (VGS = 4.5 V, ID = 14 A) Low Ciss: Ciss = 2200

VNP28N04"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP28N04 42 V 0.035 28 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT32PIN1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THETO-220POWER MOSFET (ANALOG DRIVING) COMPATIBLE

VNP28N04FIVNB28N04/VNV28N04 OMNIFET:FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP28N04FI 42 V 0.035 28 AVNB28N04 42 V 0.035 28 AVNV28N04 42 V 0.035 28 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWNISOWATT2203 SHORT CIRCUIT PROTECTION2 INTEGRATED CLAMP1 LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUTPI

VNP28N04"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP28N04 42 V 0.035 28 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT32PIN1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THETO-220POWER MOSFET (ANALOG DRIVING) COMPATIBLE