NP35N04YLG datasheet, подбор замены

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 np35n04ylg.pdf 

Preliminary Data Sheet R07DS0182EJ0100 NP35N04YLG Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 9.7 m MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 m MAX. (VGS = 5 V, ID = 17.5 A) Logic level

 6.1. Size:222K  renesas
 np35n04yug.pdf 

Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 17.5 A) Low Ciss Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V) Designed

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 vnp35n07.pdf 

VNP35N07 "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT 3 2 PIN 1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE TO-220 POWER MOSFET (ANALOG DRIVING) COMPATIBLE

 8.2. Size:280K  st
 vnp35n07 2.pdf 

VNP35N07 "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP35N07 70 V 0.028 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT 3 2 PIN 1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE TO-220 POWER MOSFET (ANALOG DRIVING) COMPATIBLE

 8.3. Size:113K  renesas
 np35n055yuk.pdf 

Preliminary Data Sheet NP35N055YUK R07DS1002EJ0100 55 V 35 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 08, 2013 Description The NP35N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.7 m MAX. (VGS = 10 V, ID = 18 A) Non logic level drive t