SUP85N03-07P - Даташиты. Аналоги. Основные параметры

SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 30 30 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View N-Channel MOSFET SUP85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb

SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature 0.0043 @ VGS = 10 V 85a D TO-263 (D2PAK) 100% Rg Tested 30 30 0.007 @ VGS = 4.5 V 85a D TO-220AB TO-263 (D2PAK) G DRAIN connected to TAB G D S Top View G D S S SUB85N03-04P Top View N

SUP85N03-3m6P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0036 at VGS = 10 V 85d TrenchFET Power MOSFET 30 67 0.0044 at VGS = 4.5 V 85d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Second

SUP85N03-3M6P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View