SUP85N03-07P Datasheet and Replacement

SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

SUP/SUB85N03-04PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction Temperature0.0043 @ VGS = 10 V 85aD TO-263 (D2PAK) 100% Rg Tested30300.007 @ VGS = 4.5 V 85aDTO-220ABTO-263(D2PAK)GDRAIN connected to TABG D STop ViewG D SSSUB85N03-04PTop ViewN

SUP85N03-3m6PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0036 at VGS = 10 V85d TrenchFET Power MOSFET30 670.0044 at VGS = 4.5 V85d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Second

SUP85N03-3M6Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop View