R6004JND3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6004JND3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток (Uds): 600 V
Предельно допустимое напряжение затвор-исток (Ugs): 30 V
Пороговое напряжение включения Ugs(th): 7 V
Максимально допустимый постоянный ток стока (Id): 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10.5 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 18 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.43 Ohm
Тип корпуса: TO252
R6004JND3 Datasheet (PDF)
0.1. r6004jnd3.pdf 
Size:1485K _1
R6004JND3DatasheetNch 600V 4A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack
0.2. r6004jnd3.pdf Size:265K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6004JND3FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
7.1. r6004jnx.pdf Size:2220K _1
R6004JNXDatasheetNch 600V 4A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)1.43ID4APD35W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
7.2. r6004jnj.pdf Size:2263K _1
R6004JNJDatasheetNch 600V 4A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPacka
7.3. r6004jnx.pdf Size:252K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6004JNXFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
7.4. r6004jnj.pdf Size:254K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6004JNJFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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