CRTD084NE6N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CRTD084NE6N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 98 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 85 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 72 nC
trⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 307 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0084 Ohm
Тип корпуса: TO252
Аналог (замена) для CRTD084NE6N
CRTD084NE6N Datasheet (PDF)
crtd084ne6n.pdf
CRTD084NE6N() Trench N-MOSFET 65V, 7.1m, 85AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 65V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID85A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd055n03l.pdf
CRTD055N03L() Trench N-MOSFET 30V, 4.3m, 58AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 4.3m Excellent QgxRDS(on) product(FOM) ID58A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd030n04l.pdf
CRTD030N04L() Trench N-MOSFET 40V, 2.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 2.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd030n03l.pdf
CRTD030N03L() Trench N-MOSFET 30V, 2.3m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd063n04l.pdf
CRTD063N04L() Trench N-MOSFET 40V, 4.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 4.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor
crtd045n03l.pdf
CRTD045N03LTrench N-MOSFET 30V, 3.1m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 3.1m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor control and drive Battery mana
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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