SSF7N80A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF7N80A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 90 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 67 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.8 Ohm
Тип корпуса: TO3PF
SSF7N80A Datasheet (PDF)
ssf7n60b.pdf
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November 2001SSF7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast s
ssf7n90a.pdf
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Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value Un
ssf7ns65g.pdf
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SSF7NS65G Main Product Characteristics: VDSS 650V RDS(on) 0.58 (typ.) ID 7A TO-251 Mark in g a nd pin Sch ema tic diag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65G series MOSFETs is a new t
ssf7ns60d.pdf
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SSF7NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.56 (typ.) ID 7A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60D series MOSFETs is a new t
ssf7n60.pdf
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SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage NChannel enhancement mode
ssf7n60f.pdf
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SSF7N60F Main Product Characteristics: VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7ns60f.pdf
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SSF7NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.54(typ.) ID 7A Marking a nd p in Schematic diagram TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60F series MOSFETs is a new techno
ssf7ns70ug.pdf
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SSF7NS70UG Main Product Characteristics: VDSS 700V RDS(on) 0.7 (typ.) ID 7A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS70UG series MOSFETs is a new technology,
ssf7ns65uf.pdf
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SSF7NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.6 (typ.) ID 7A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UF series MOSFETs is a new technology, which
ssf7ns65ud.pdf
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SSF7NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-252 (DPAK) Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF7NS65UD series MOSFETs is a new technology, whi
ssf7n65f.pdf
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SSF7N65F Main Product Characteristics: VDSS 650V RDS(on) 1.26 (typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150
ssf7ns70ugx.pdf
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SSF7NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 0.7 (typ.) ID 7A IPAK-NX Marking and P in Schematic Diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS70UGX series MOSFETs is a new technology, whic
ssf7ns65ug.pdf
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SSF7NS65UG Main Product Characteristics: VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-251 (IPAK) Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UG series MOSFETs is a new technology,
Другие MOSFET... SSF4N90AS , SSF5N80A , SSF5N90A , SSF6N70A , SSF6N80A , SSF6N90A , SSF70N10A , SSF7N60A , 60N06 , SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A , SSH10N70 .
![SSF7N80A](https://alltransistors.com/images/us.png)
![SSF7N80A](https://alltransistors.com/images/es.png)
![SSF7N80A](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C