CSN03N2P2. Аналоги и основные параметры

Наименование производителя: CSN03N2P2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 91 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 155 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 1588 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm

Тип корпуса: DFN5X6

Аналог (замена) для CSN03N2P2

- подборⓘ MOSFET транзистора по параметрам

 

CSN03N2P2 даташит

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CSN03N2P2

CSN03N2P2 30V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching a n d synchronous rectification Device Marking and Package Information Device Package Marking

 ..2. Size:932K  convert
 csn03n2p2.pdf pdf_icon

CSN03N2P2

CSN03N2P2 30V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching a n d synchronous rectification Device Marking and Package Information Device Package Marking

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 csn03n3p9.pdf pdf_icon

CSN03N2P2

nvert CSN03N3P9 Suzhou Convert Semiconductor Co ., Ltd. 30V N-Channel Split Gate Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS DC/DC Converter Ideal for high-frequency switching and synchronous rectificati

 8.2. Size:699K  convert
 csn03n3p9.pdf pdf_icon

CSN03N2P2

nvert CSN03N3P9 Suzhou Convert Semiconductor Co ., Ltd. 30V N-Channel Split Gate Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS DC/DC Converter Ideal for high-frequency switching and synchronous rectificati

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... CSFR6N70F, CSFR6N70K, CSFR6N70U, CSFR6N70D, CSFR7N60F, CSFR7N60K, CSFR7N60D, CSFR7N60U, 4435, CSN03N3P9, CSN04N1P5, CSN06N3P6, CSNC04N8P5, CSP08N6P5, CSP10N4P2, CSP10N8P3, CST08N50U