CJAB40N03 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CJAB40N03
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 36 ns
Cossⓘ - Выходная емкость: 228 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: PDFNWB3.3X3.3-8L
- подбор MOSFET транзистора по параметрам
CJAB40N03 Datasheet (PDF)
cjab40n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjab40n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjab40sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES
cjab40sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES
Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: DMN3052LSS | FHF630A
History: DMN3052LSS | FHF630A
Список транзисторов
Обновления
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