CJAB40SN10 - Аналоги. Основные параметры
Наименование производителя: CJAB40SN10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.5 ns
Cossⓘ - Выходная емкость: 280 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: PDFNWB3.3X3.3-8L
Аналог (замена) для CJAB40SN10
CJAB40SN10 технические параметры
cjab40sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.3 3.3-8L ID V(BR)DSS RDS(on)TYP 8.5m @10V 100V 40A 11m @4.5V DESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES
cjab40sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.3 3.3-8L ID V(BR)DSS RDS(on)TYP 8.5m @10V 100V 40A 11m @4.5V DESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES
cjab40n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.3 3.3-8L 6.5m @10V 30 V 40A 10.5m @4.5V DESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjab40n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.3 3.3-8L 6.5m @10V 30 V 40A 10.5m @4.5V DESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
Другие MOSFET... CJAB20N03 , CJAB20SN06 , CJAB25N03 , CJAB25N04 , CJAB25P03 , CJAB25SN06 , CJAB35P03 , CJAB40N03 , AON6414A , CJAB55N03 , CJAB60N03 , CJAC0410 , CJAC100P03 , CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 .
Список транзисторов
Обновления
MOSFET: AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q | AP50P20K | AP50P06K | AP50N06K | AP50N04QD | AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847
Popular searches
oc71 | njw0302g | 2n3904 transistor equivalent | 2sc2312 | bu406 datasheet | irfb7437 | tip32a | p75nf75 mosfet equivalent