CJAB40SN10 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CJAB40SN10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.5 ns
Cossⓘ - Выходная емкость: 280 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: PDFNWB3.3X3.3-8L
Аналог (замена) для CJAB40SN10
CJAB40SN10 Datasheet (PDF)
cjab40sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES
cjab40sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES
cjab40n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjab40n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
Другие MOSFET... CJAB20N03 , CJAB20SN06 , CJAB25N03 , CJAB25N04 , CJAB25P03 , CJAB25SN06 , CJAB35P03 , CJAB40N03 , IRFB4110 , CJAB55N03 , CJAB60N03 , CJAC0410 , CJAC100P03 , CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 .
History: SSS1510 | SPA07N60C2 | IPP024N06N3G | SFG130N10FF | IRF7451PBF
History: SSS1510 | SPA07N60C2 | IPP024N06N3G | SFG130N10FF | IRF7451PBF
Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
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