All MOSFET. CJAB40SN10 Datasheet

 

CJAB40SN10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CJAB40SN10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFNWB3.3X3.3-8L

 CJAB40SN10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJAB40SN10 Datasheet (PDF)

 ..1. Size:3938K  1
 cjab40sn10.pdf

CJAB40SN10 CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES

 ..2. Size:3938K  jiangsu
 cjab40sn10.pdf

CJAB40SN10 CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES

 8.1. Size:1352K  1
 cjab40n03.pdf

CJAB40SN10 CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

 8.2. Size:1352K  jiangsu
 cjab40n03.pdf

CJAB40SN10 CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF3709S

 

 
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