All MOSFET. CJAB40SN10 Datasheet

 

CJAB40SN10 Datasheet and Replacement


   Type Designator: CJAB40SN10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFNWB3.3X3.3-8L
 

 CJAB40SN10 substitution

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CJAB40SN10 Datasheet (PDF)

 ..1. Size:3938K  1
cjab40sn10.pdf pdf_icon

CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES

 ..2. Size:3938K  jiangsu
cjab40sn10.pdf pdf_icon

CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES

 8.1. Size:1352K  1
cjab40n03.pdf pdf_icon

CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

 8.2. Size:1352K  jiangsu
cjab40n03.pdf pdf_icon

CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

Datasheet: CJAB20N03 , CJAB20SN06 , CJAB25N03 , CJAB25N04 , CJAB25P03 , CJAB25SN06 , CJAB35P03 , CJAB40N03 , IRFB4110 , CJAB55N03 , CJAB60N03 , CJAC0410 , CJAC100P03 , CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 .

History: 4N65K

Keywords - CJAB40SN10 MOSFET datasheet

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