All MOSFET. CJAB40SN10 Datasheet

 

CJAB40SN10 MOSFET. Datasheet pdf. Equivalent

Type Designator: CJAB40SN10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 4.5 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: PDFNWB3.3X3.3-8L

CJAB40SN10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJAB40SN10 Datasheet (PDF)

0.1. cjab40sn10.pdf Size:3938K _jiangsu

CJAB40SN10
CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L ID V(BR)DSS RDS(on)TYP 8.5m@10V100V40A11m@4.5VDESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES

8.1. cjab40n03.pdf Size:1352K _jiangsu

CJAB40SN10
CJAB40SN10

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 6.5m@10V30 V40A10.5m@4.5VDESCRIPTION The CJAB40N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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