SSH5N90A - аналоги, параметры транзистора - Справочник транзисторов

SSH5N90A даташит

..1. Size:934K samsung
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Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 2.300 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

7.1. Size:264K semelab
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9.1. Size:258K 1
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SSH5N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.824 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

Другие MOSFET... SSH40N20 , SSH40N20A , SSH45N20A , SSH4N70 , SSH4N70A , SSH4N80AS , SSH4N90AS , SSH5N80A , IRLB4132 , SSH60N06 , SSH60N06A , SSH60N10 , SSH60N10A , SSH6N55 , SSH6N60 , SSH6N70 , SSH6N70A .