CEB6086 - аналоги и даташиты транзистора

 

CEB6086 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: CEB6086
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 235 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0092 Ohm
   Тип корпуса: TO263

 Аналог (замена) для CEB6086

 

CEB6086 Datasheet (PDF)

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CEB6086

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

 ..2. Size:357K  inchange semiconductor
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CEB6086

isc N-Channel MOSFET Transistor CEB6086 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.1. Size:434K  cet
cep6086l ceb6086l.pdfpdf_icon

CEB6086

CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE

 9.1. Size:399K  cet
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CEB6086

CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc =

Другие MOSFET... CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L , CEM9288 , CEN2307A , CEN2321A , 2SK3568 , CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 .

History: CEF9060N

 

 
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