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CEB6086 PDF Specs and Replacement


   Type Designator: CEB6086
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO263
 

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CEB6086 PDF Specs

 ..1. Size:418K  cet
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CEB6086

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par... See More ⇒

 ..2. Size:357K  inchange semiconductor
ceb6086.pdf pdf_icon

CEB6086

isc N-Channel MOSFET Transistor CEB6086 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 0.1. Size:434K  cet
cep6086l ceb6086l.pdf pdf_icon

CEB6086

CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m @VGS = 10V. RDS(ON) = 13.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE ... See More ⇒

 9.1. Size:399K  cet
cep6060l ceb6060l.pdf pdf_icon

CEB6086

CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m @VGS = 10V. RDS(ON) = 25m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = ... See More ⇒

Detailed specifications: CED25N02 , CEU25N02 , CEM2192 , CEM4052 , CEM6056L , CEM9288 , CEN2307A , CEN2321A , 2SK3568 , CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 .

History: TIS75

Keywords - CEB6086 MOSFET specs

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