DMT3006LPS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DMT3006LPS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5.5 ns
Cossⓘ - Выходная емкость: 456 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: POWERDI5060-8
Аналог (замена) для DMT3006LPS
DMT3006LPS Datasheet (PDF)
dmt3006lps.pdf

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En
dmt3006lps-13.pdf

DMT3006LPS GreenN-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En
dmt3006lfv-7.pdf

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling
dmt3006lfv.pdf

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Другие MOSFET... DMPH6050SK3Q , DMT10H009LCG , DMT10H010LK3 , DMT10H010LSS , DMT10H015LPS , DMT10H015LSS , DMT3002LPS , DMT3006LFV , 8205A , DMT3009LDT , DMT3009LFVW , DMT3020LFDB , DMT3020LFDF , DMT3020LSD , DMT31M6LPS , DMT32M5LFG , DMT32M5LPS .
History: 2SK1213 | JCS7N65CB | IRFU014PBF | BSS123N | JCS4N65FB | JCS22N50FC | BL3N150-A
History: 2SK1213 | JCS7N65CB | IRFU014PBF | BSS123N | JCS4N65FB | JCS22N50FC | BL3N150-A



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