Справочник MOSFET. DMTH8003SPS

 

DMTH8003SPS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMTH8003SPS
   Маркировка: H6016LD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 124.3 nC
   trⓘ - Время нарастания: 24.4 ns
   Cossⓘ - Выходная емкость: 533 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: POWERDI5060-8

 Аналог (замена) для DMTH8003SPS

 

 

DMTH8003SPS Datasheet (PDF)

 ..1. Size:499K  diodes
 dmth8003sps.pdf

DMTH8003SPS DMTH8003SPS

DMTH8003SPS Green80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V

 0.1. Size:499K  1
 dmth8003sps-13.pdf

DMTH8003SPS DMTH8003SPS

DMTH8003SPS Green80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V

 8.1. Size:519K  1
 dmth8012lpsw-13.pdf

DMTH8003SPS DMTH8003SPS

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

 8.2. Size:550K  diodes
 dmth8012lk3.pdf

DMTH8003SPS DMTH8003SPS

Green DMTH8012LK3 80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature ID max BVDSS RDS(ON) max TC = +25 environments C Low RDS(ON) ensures on state losses are minimized 16m @ VGS = 10V 50A High Conversion Efficiency 80V Low Input Capacitance 21m @ VGS = 4.5V 43A

 8.3. Size:519K  diodes
 dmth8012lpsw.pdf

DMTH8003SPS DMTH8003SPS

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top