SSP6N70A - параметры транзистора MOSFET, его аналоги, datasheet

SSP6N70A Datasheet (PDF)

..1. Size:864K samsung
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Advanced Power MOSFETFEATURESBVDSS = 700 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.1. Size:288K 1
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9.2. Size:863K samsung
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Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1. (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymb

9.3. Size:863K samsung
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Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .