HF10N60 - аналоги, параметры транзистора - Справочник транзисторов

HF10N60 даташит

..1. Size:1072K haolin elec
hf10n60.pdf pdf_icon

Nov 2005 BVDSS = 600 V RDS(on) typ = 0.64 HF10N60 ID = 9.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 44 nC (Typ.) Extended Safe Operat

0.1. Size:668K feihonltd
fhp10n60a fhf10n60a.pdf pdf_icon

N N-CHANNEL MOSFET FHP10N60A/ FHF10N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 23pF) Low Crss (typical 23pF ) VDSS 600V Fast switching Rdson-typ 0.68 @Vgs=10V 100% 100% avalanche tested Qg-typ 45nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode power su

8.1. Size:603K feihonltd
fhp10n65b fhf10n65b.pdf pdf_icon

N N-CHANNEL MOSFET FHP10N65B/FHF10N65B MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.75 @Vgs=10V 100% 100% avalanche tested Qg-typ 30nC dv/dt

8.2. Size:543K feihonltd
fhp10n65a fhf10n65a.pdf pdf_icon

N N-CHANNEL MOSFET FHP10N65A/FHF10N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.8 @Vgs=10V 100% 100% avalanche tested Qg-typ 29nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode pow

Другие MOSFET... HD70N08 , HU70N08 , HD830 , HU830 , HD830U , HU830U , HD840U , HU840U , 4N60 , HF12N60 , HF20N50 , HP20N50 , HF20N60 , HP20N60 , HF25N50 , HP25N50 , HF5N65 .