HF10N60 - аналоги, даташиты, параметры транзистора

HF10N60 Datasheet (PDF)

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hf10n60.pdf pdf_icon

Nov 2005BVDSS = 600 VRDS(on) typ = 0.64 HF10N60ID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 44 nC (Typ.) Extended Safe Operat

0.1. Size:668K feihonltd
fhp10n60a fhf10n60a.pdf pdf_icon

N N-CHANNEL MOSFET FHP10N60A/ FHF10N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 23pF) Low Crss (typical 23pF ) VDSS 600V Fast switching Rdson-typ 0.68 @Vgs=10V 100% 100% avalanche tested Qg-typ 45nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode power su

8.1. Size:603K feihonltd
fhp10n65b fhf10n65b.pdf pdf_icon

N N-CHANNEL MOSFET FHP10N65B/FHF10N65B MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.75 @Vgs=10V 100% 100% avalanche tested Qg-typ 30nC dv/dt

8.2. Size:543K feihonltd
fhp10n65a fhf10n65a.pdf pdf_icon

N N-CHANNEL MOSFET FHP10N65A/FHF10N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.8 @Vgs=10V 100% 100% avalanche tested Qg-typ 29nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATIONHigh efficiency switch mode pow

Другие MOSFET... HD70N08 , HU70N08 , HD830 , HU830 , HD830U , HU830U , HD840U , HU840U , 4N60 , HF12N60 , HF20N50 , HP20N50 , HF20N60 , HP20N60 , HF25N50 , HP25N50 , HF5N65 .