HP25N50 - параметры транзистора MOSFET, его аналоги, datasheet

HP25N50 Datasheet (PDF)

..1. Size:4283K haolin elec
hf25n50 hp25n50.pdf pdf_icon

HF25N50,HP25N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinu

0.1. Size:158K vishay
sihp25n50e.pdf pdf_icon

SiHP25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

9.1. Size:208K vishay
sihp25n40d.pdf pdf_icon

SiHP25N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.17- Low Input Capacitance (Ciss)Qg max. (nC) 88- Reduced Capacitive Switching LossesQgs (nC) 12 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 23

9.2. Size:138K vishay
sihp25n60efl.pdf pdf_icon

SiHP25N60EFLwww.vishay.comVishay SiliconixE Series Power MOSFET with Fast Body Diode and Low Gate ChargeFEATURESPRODUCT SUMMARY Reduced figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 650 Fast body diode MOSFET using E series RDS(on) typ. () at 25 C VGS = 10 V 0.127technologyQg (Max.) (nC) 75 Reduced trr, Qrr, and IRRMQgs (nC) 17 Increased robust

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .