HYG060N08NS1P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HYG060N08NS1P
Маркировка: G060N08
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 48 nC
trⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 1190 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO220
Аналог (замена) для HYG060N08NS1P
HYG060N08NS1P Datasheet (PDF)
hyg060n08ns1p hyg060n08ns1b.pdf
HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET
hyg060n08ns1d hyg060n08ns1u hyg060n08ns1v.pdf
HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D SG D GLead-Free and Green Devices Available SD (RoHS Compliant) GTO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf
HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching
hyg065n15ns1p hyg065n15ns1b.pdf
HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa
hyg064n08na1p hyg064n08na1b.pdf
HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma
hyg065n07ns1p hyg065n07ns1b.pdf
HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Channel MOSFET
hyg068n08nr1p.pdf
HYG068N08NR1PN-Channel Enhancement Mode MOSFETFeature Pin Description 80V/160ARDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices AvailableSD(RoHS Compliant)GTO-220FB-3L Applications Power management in Inverter System Electric vehicle controllers Lithium battery protection board Switching Applicat
hyg065n07ns1d hyg065n07ns1u hyg065n07ns1v.pdf
HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/70A RDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested SD Reliable and Rugged SSGDDGG Halogen Free and Green Devices Available SDG(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3SApplications Switching application Power Management for Inverter Syste
hyg067n07nq1.pdf
HYG067N07NQ1P/B/PSN-Channel Enhancement Mode MOSFETFeature Pin Description 68V/80ARDS(ON)= 6.5m(typ.)@VGS = 10V 100% Avalanche TestedSD Reliable and RuggedG Lead-Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-220FB-3L TO-3PS-3L TO-263-2LApplications Portable equipment and battery powered systems DC-DC Converters Switch
hyg065n15ns1b6.pdf
HYG065N15NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.0m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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