HYG060N08NS1P PDF and Equivalents Search

 

HYG060N08NS1P Specs and Replacement

Type Designator: HYG060N08NS1P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 1190 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO220

HYG060N08NS1P substitution

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HYG060N08NS1P datasheet

 ..1. Size:627K  hymexa
hyg060n08ns1p hyg060n08ns1b.pdf pdf_icon

HYG060N08NS1P

HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET ... See More ⇒

 2.1. Size:871K  hymexa
hyg060n08ns1d hyg060n08ns1u hyg060n08ns1v.pdf pdf_icon

HYG060N08NS1P

HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m (typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D S G D G Lead-Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch... See More ⇒

 8.1. Size:934K  hymexa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf pdf_icon

HYG060N08NS1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m (typ.) @VGS = -10V RDS(ON)= 8.5 m (typ.) @VGS = -4.5V S D S G D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching... See More ⇒

 9.1. Size:1408K  hymexa
hyg065n15ns1p hyg065n15ns1b.pdf pdf_icon

HYG060N08NS1P

HYG065N15NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/165A RDS(ON)=6.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Pa... See More ⇒

Detailed specifications: HYG035N06LS1C2 , HYG045N03LA1C2 , HYG050N08NS1P , HYG050N08NS1B , HYG050N13NS1B6 , HYG060N08NS1D , HYG060N08NS1U , HYG060N08NS1V , TK10A60D , HYG060N08NS1B , HYG060P04LQ1D , HYG060P04LQ1U , HYG060P04LQ1V , HYG064N08NA1P , HYG064N08NA1B , HYG065N07NS1D , HYG065N07NS1U .

History: ME2302 | HYG045N03LA1C2

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