IPD80R280P7 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPD80R280P7
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 101 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 20 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD80R280P7
IPD80R280P7 Datasheet (PDF)
ipd80r280p7.pdf

IPD80R280P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and
ipd80r2k8ce ipu80r2k8ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine
ipd80r2k4p7.pdf

IPD80R2K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and
ipd80r2k0p7.pdf

IPD80R2K0P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and
Другие MOSFET... IPD650P06NM , IPD70N12S3-11 , IPD70N12S3L-12 , IPD70P04P4L-08 , IPD70R1K4P7S , IPD70R360P7S , IPD70R600P7S , IPD80R1K4P7 , IRF520 , IPD80R2K0P7 , IPD80R2K4P7 , IPD80R2K7C3A , IPD80R360P7 , IPD80R3K3P7 , IPD80R450P7 , IPD80R4K5P7 , IPD80R600P7 .
History: AF5N65S | SFB050N135C3 | WSD3020DN | IRLU3915PBF | GT060N10T | APT9F100B | HYG020N04NA1B
History: AF5N65S | SFB050N135C3 | WSD3020DN | IRLU3915PBF | GT060N10T | APT9F100B | HYG020N04NA1B



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
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