All MOSFET. IPD80R280P7 Datasheet

 

IPD80R280P7 Datasheet and Replacement


   Type Designator: IPD80R280P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO252
 

 IPD80R280P7 substitution

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IPD80R280P7 Datasheet (PDF)

 ..1. Size:953K  infineon
ipd80r280p7.pdf pdf_icon

IPD80R280P7

IPD80R280P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

 7.1. Size:2275K  infineon
ipd80r2k8ce ipu80r2k8ce.pdf pdf_icon

IPD80R280P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 7.2. Size:960K  infineon
ipd80r2k4p7.pdf pdf_icon

IPD80R280P7

IPD80R2K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

 7.3. Size:964K  infineon
ipd80r2k0p7.pdf pdf_icon

IPD80R280P7

IPD80R2K0P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

Datasheet: IPD650P06NM , IPD70N12S3-11 , IPD70N12S3L-12 , IPD70P04P4L-08 , IPD70R1K4P7S , IPD70R360P7S , IPD70R600P7S , IPD80R1K4P7 , IRF520 , IPD80R2K0P7 , IPD80R2K4P7 , IPD80R2K7C3A , IPD80R360P7 , IPD80R3K3P7 , IPD80R450P7 , IPD80R4K5P7 , IPD80R600P7 .

History: IRF7240TRPBF | IRHMS597Z60 | HAT1048RJ | JCS640FH | BRB50N06 | CEP50N06 | SQJ407EP

Keywords - IPD80R280P7 MOSFET datasheet

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