All MOSFET. IPD80R280P7 Datasheet

 

IPD80R280P7 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD80R280P7

Marking Code: 80R280P7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 101 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 36 nC

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: TO252

IPD80R280P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD80R280P7 Datasheet (PDF)

0.1. ipd80r280p7.pdf Size:953K _infineon

IPD80R280P7
IPD80R280P7

IPD80R280P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

7.1. ipd80r2k7c3a.pdf Size:510K _infineon

IPD80R280P7
IPD80R280P7

Data Sheet IPD80R2k7C3ACoolMOSTM Power TransistorProduct Summary FeaturesVDS 800 V New revolutionary high voltage technologyRDS(on)max @ Tj = 25C 2.7 W Extreme dv/dt ratedQg,typ 12 nC High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compoundPG-TO252-3 Ultra

7.2. ipd80r2k4p7.pdf Size:960K _infineon

IPD80R280P7
IPD80R280P7

IPD80R2K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

 7.3. ipd80r2k8ce ipu80r2k8ce.pdf Size:2275K _infineon

IPD80R280P7
IPD80R280P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

7.4. ipd80r2k0p7.pdf Size:964K _infineon

IPD80R280P7
IPD80R280P7

IPD80R2K0P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

 7.5. ipd80r2k8ce.pdf Size:243K _inchange_semiconductor

IPD80R280P7
IPD80R280P7

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CEFEATURESStatic drain-source on-resistance:RDS(on)2.8Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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