IPZA60R045P7 datasheet, аналоги, основные параметры

Наименование производителя: IPZA60R045P7  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 201 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 61 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 63 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm

Тип корпуса: TO247-4

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Аналог (замена) для IPZA60R045P7

- подборⓘ MOSFET транзистора по параметрам

 

IPZA60R045P7 даташит

 ..1. Size:1161K  infineon
 ipza60r045p7.pdf pdf_icon

IPZA60R045P7

IPZA60R045P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V tab CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switchi

 6.1. Size:1164K  infineon
 ipza60r080p7.pdf pdf_icon

IPZA60R045P7

IPZA60R080P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 6.2. Size:1153K  infineon
 ipza60r060p7.pdf pdf_icon

IPZA60R045P7

IPZA60R060P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 6.3. Size:1194K  infineon
 ipza60r037p7.pdf pdf_icon

IPZA60R045P7

IPZA60R037P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

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