All MOSFET. IPZA60R045P7 Datasheet

 

IPZA60R045P7 Datasheet and Replacement


   Type Designator: IPZA60R045P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 201 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO247-4
 

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IPZA60R045P7 Datasheet (PDF)

 ..1. Size:1161K  infineon
 ipza60r045p7.pdf pdf_icon

IPZA60R045P7

IPZA60R045P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VtabCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switchi

 6.1. Size:1164K  infineon
 ipza60r080p7.pdf pdf_icon

IPZA60R045P7

IPZA60R080P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 6.2. Size:1153K  infineon
 ipza60r060p7.pdf pdf_icon

IPZA60R045P7

IPZA60R060P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 6.3. Size:1194K  infineon
 ipza60r037p7.pdf pdf_icon

IPZA60R045P7

IPZA60R037P7MOSFETPG-TO 247-4-3600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

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Datasheet: IPW80R360P7 , IPZ40N04S5-3R1 , IPZ40N04S5-5R4 , IPZ40N04S5-8R4 , IPZ40N04S5L-7R4 , IPZ60R060C7 , IPZ60R070P6 , IPZA60R037P7 , 8N60 , IPZA60R060P7 , IPZA60R080P7 , IPZA60R120P7 , IPZA60R180P7 , IQE006NE2LM5 , IQE006NE2LM5CG , IRF1310NLPBF , IRF135SA204 .

Keywords - IPZA60R045P7 MOSFET datasheet

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