ME2328 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ME2328
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 105 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 12 nC
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 38 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
Тип корпуса: SOT-23
ME2328 Datasheet (PDF)
me2328 me2328-g.pdf

ME2328/ME2328-G N - Channel 105-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)270m@VGS=10V The ME2328 is the N-Channel logic enhancement mode power field RDS(ON)340m@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especiall
me2323d me2323d-g.pdf

ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFETESD Protection GENERAL DESCRIPTION FEATURES The ME2323D(-G) is the P-Channel logic enhancement mode power RDS(ON) 50m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 65m@VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON) 75m@VGS=-1.8
me2320d me2320d-g.pdf

ME2320D/ME2320D-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320D is the N-Channel logic enhancement mode power RDS(ON)=21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=40 m@VGS=1.8V minimize on-st
me2325s me2325s-g.pdf

ME2325S/ME2325S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)50m@VGS=-10V The ME2325S is the P-Channel logic enhancement mode power field RDS(ON)76m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ECH8668 | 2SK4015 | IRF3805
History: ECH8668 | 2SK4015 | IRF3805



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